Enhanced Threshold Voltage and Improved Subthreshold Swing Using NiOX/ITO Reverse Bias Gated Diamond pMOS
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2024-10-01 |
| Journal | physica status solidi (RRL) - Rapid Research Letters |
| Authors | Seetha Jeyakumar Ranie, Subrat Kumar Pradhan, Vivek Kumar Shukla, Kasturi Saha, Padmnabh Rai |
| Institutions | University of Mumbai, Center for Excellence in Basic Sciences |
Abstract
Section titled âAbstractâAn increase in the device performance of diamondâbased pâtype metal-oxide-semiconductor (pMOS) transistors using a combination of pâtype nickel oxide and nâtype indium tin oxide (NiO X /ITO) reverse bias diode as the gate dielectric is reported. Negative threshold voltage pMOS transistors are desirable for digital circuits and power applications for failâsafe operation. A Schottky gateâbased conventional diamond pMOS transistor suffers from many limitations, including a positive threshold voltage ( V T ). Herein, it is experimentally demonstrated that NiO X /ITO gate dielectric with Al gate contact circumvents many critical limitations, providing a negative threshold voltage of â1.2 V, improved subthreshold slope of 145 mV dec â1 , current ON/OFF ratio >10 7 , and peak gate leakage current reduction >10 3 . An Al/NiO X âbased control gate structure shifts the V TH negative with improvements in crucial device performances. Adding a reverse bias junction through the Al/ITO/NiO X heterointerface with the Al metal gate further improves performance. The measured device characteristics are explained in a common framework of energy band diagram for all the devices.