Very low subthreshold swing normally-off diamond FET and its logic inverters
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-12-23 |
| Journal | Applied Physics Letters |
| Authors | Yuesong Liang, Wei Wang, Tianlin Niu, Genqiang Chen, Fei Wang |
| Institutions | Xiāan Jiaotong University |
Abstract
Section titled āAbstractāA normally-off field effect transistor with 15 nm LaB6 gate material directly deposited on hydrogen-terminated diamond surface has been fabricated and characterized. The reason for the normally-off operation could be attributed to the low work function of LaB6 layer, which can deplete holes in the channel. Due to the formation of C-B bond of interface and the thin thickness of LaB6, the subthreshold swing is as low as 70.6 mV/dec and interface state density is as low as 2 Ć 1011 cmā2eVā1. The maximum drain current density (IDSmax), extrinsic transconductance (Gm), threshold voltage (VTH), and on/off ratio for the device with 8-Ī¼m gate length are ā60 mA/mm, 5 mS/mm, ā1.1 V, and 109, respectively. The low-field mobility (Ī¼0) without vertical-field degradation is 187 cm2/V s. The trapped charge density and fixed charge density are 8.75 Ć 1011 and 1.26 Ć 1012 cmā2, respectively. The LaB6/H-diamond logic inverters coupling with different load resistors show distinct inversion characteristics with a peak gain of 4.7 V/V.