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Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-02-04
JournalApplied Physics Reviews
AuthorsJ. R. Sun, Shouhang Li, Cheng Shao, Zhen Tong, Meng An
InstitutionsCentre National de la Recherche Scientifique, Advanced Energy (United States)
Citations6

Abstract

Section titled ā€œAbstractā€

As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron-phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by āˆ¼800% at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2008 - Diamond as an electronic material [Crossref]
  2. 2002 - High carrier mobility in single-crystal plasma-deposited diamond [Crossref]
  3. 2021 - First-principles predictions of Hall and drift mobilities in semiconductors [Crossref]
  4. 2010 - Ultrananocrystalline and nanocrystalline diamond thin films for MEMS/NEMS applications [Crossref]
  5. 2001 - Ultraviolet emission from a diamond PN junction [Crossref]
  6. 2015 - Efficient Raman frequency conversion of high-power fiber lasers in diamond [Crossref]
  7. 2019 - Diamond detectors for direct detection of sub-GeV dark matter [Crossref]
  8. 2010 - Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon [Crossref]
  9. 2006 - Uniaxial-process-induced strained-Si: Extending the CMOS roadmap [Crossref]

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