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6CCVD Research

The effect of vacancy defects on the interfacial thermal resistance at the GaN/diamond interfaces - molecular dynamics simulation

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-04-23
JournalModelling and Simulation in Materials Science and Engineering
AuthorsXuejiao Zhang, Yutong Li, Jinxi Liu, Cun Zhang, Lixiang Zhang

Abstract

Section titled ā€œAbstractā€

Abstract The utilization of diamond as substrate for GaN power devices is regarded as a promising heat dissipation measure. However, the bonding interface between diamond and GaN wafers is prone to defects and significant interfacial thermal resistance (ITR). This issue severely compromises the thermal performance of the devices. This paper focuses on the urgent problems that need to be solved in high electron mobility transistors manufacturing, and systematically studies the influence of micro random vacancy defects on the heat transfer performance of GaN/diamond interface using non-equilibrium molecular dynamics method. The intrinsic mechanism was analyzed through radial distribution function and phonon density of states at the micro scale. The results showed that the ITR decreases gradually with the increase of random vacancy defect density in GaN. When the defect concentration reached 12%, the ITR was 11.89 (m 2 K) GW āˆ’1 , a decrease of 69%. Similarly, the increase of random defects in diamond will also reduce ITR. When the concentration of vacancy defects in diamond increased from 0 to 12%, the ITR decreased from 20.12 (m 2 K) GW āˆ’1 to 13.05 (m 2 K) GW āˆ’1 , a decrease of 54%. The research provides a theoretical basis for the thermal design of GaN/diamond devices.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  3. 2019 - High thermal boundary conductance across bonded heterogeneous GaN-SiC interfaces [Crossref]
  4. 2020 - Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices [Crossref]
  5. 2021 - Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design [Crossref]
  6. 2015 - Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon [Crossref]
  7. 2015 - Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications [Crossref]
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  9. 2009 - Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers [Crossref]
  10. 2021 - Interface engineering enabling next generation GaN-on-diamond power devices [Crossref]

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