High off-state voltage (4266 V) diamond metal oxide semiconductor field effect transistors
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2025-05-27 |
| Journal | Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena |
| Authors | Niloy Chandra Saha, Masanori Eguchi, Toshiyuki Oishi, Makoto Kasu |
| Institutions | Saga University |
| Citations | 1 |
Abstract
Section titled “Abstract”In this study, diamond metal-oxide semiconductor field-effect transistors (MOSFETs) with NO2 p-type doping and Al2O3 passivation layer having a gate-to-drain length of 50 μm showed a record high off-state breakdown voltage of 4266 V. A MOSFET with a gate-to-drain length of 11.5 μm exhibited a maximum drain current density of 409 mA/mm with a low on-resistance of 80.3 Ω·mm and a maximum available power density (Baliga’s figure of merit) of 162 MW/cm2. Furthermore, the subthreshold swing was determined to be 227 mV/dec with a corresponding interfacial states density of 7.07 × 1012 eV−1 cm−2. This study explores the feasibility of diamond MOSFETs in withstanding high off-state voltage for prospective applications in power electronics.