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6CCVD Research

First-principles studies of nitrogen doping in 4H-SiC

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2025-06-02
JournalJournal of Applied Physics
AuthorsTangjiang Qian, Ji-Hui Yang
InstitutionsState Key Laboratory of Surface Physics, Fudan University
Citations1

Abstract

Section titled “Abstract”

Nitrogen (N) doping is crucial in 4H-SiC for preparing n-type electronic devices and for creating useful color centers. However, due to the doping complexity, such as N doping concentrations, growth or annealing temperatures, and chemical potentials, accurate control of N doping in 4H-SiC still remains largely unexplored both experimentally and theoretically. In this work, we systematically investigate the defect properties of N-doped 4H-SiC using first-principles calculations. By comprehensively investigating the effects of growth temperatures, chemical potentials, and the total amount of incorporated N on defect concentrations, Fermi levels, and carrier densities, we identify optimal doping conditions in 4H-SiC for achieving improved n-type electrical and optical properties in terms of color center concentrations. Our thermodynamic simulations indicate that, higher N incorporation, higher growth or annealing temperatures, and Si-rich conditions are favored for obtaining better n-type electricity while higher concentrations of Si vacancy and nitrogen-vacancy color centers can be achieved with more N incorporation, higher growth or annealing temperatures, and C-rich conditions. Our work provides valuable theoretical insights for optimizing N doping in 4H-SiC, which can guide the design of advanced n-type electronic devices and enhance the performance of color centers for quantum applications.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2020 - Fundamental research on semiconductor SiC and its applications to power electronics [Crossref]
  2. 2010 - Nanoscale transport properties at silicon carbide interfaces [Crossref]
  3. 2008 - Prospects for SiC electronics and sensors [Crossref]
  4. 2017 - A review on single photon sources in silicon carbide [Crossref]
  5. 2016 - Solid-state single-photon emitters [Crossref]
  6. 2020 - Silicon carbide color centers for quantum applications [Crossref]
  7. 2019 - Ultra-long coherence times amongst room-temperature solid-state spins [Crossref]
  8. 2014 - Nitrogen-vacancy centers in diamond: Nanoscale sensors for physics and biology [Crossref]
  9. 2021 - Theoretical and experimental study of the nitrogen-vacancy center in 4H-SiC [Crossref]
  10. 2010 - Quantum computing with defects [Crossref]

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