Effect of Diamond and Graphene Heat Spreaders on Characteristics of AlGaN/GaN HEMT
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | Physics Procedia |
| Authors | К. С. Гришаков, В. Ф. Елесин, Р. В. Рыжук, Н. И. Каргин, С.В. Миннебаев |
| Institutions | National Research Nuclear University MEPhI |
| Citations | 8 |
Abstract
Section titled “Abstract”The impact of diamond and graphene heat spreading layers on the thermal and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulations in the hydrodynamic model. It is shown that the introduction of heat spreader significantly reduced maximum device temperature, increased the device lifetime, and improved current-voltage characteristics. The conditions under which the heat spreader works most effectively were found.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2006 - Electro-thermal simulations of the self-heating effects in GaN-based field-effect transistors [Crossref]
- 2006 - Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures [Crossref]
- 2013 - Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders [Crossref]
- 2012 - Graphene quilts for thermal management of high-power GaN transistors [Crossref]