Superinjection in Diamond p-i-n Diodes - Bright Single-Photon Electroluminescence of Color Centers Beyond the Doping Limit
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-08-07 |
| Journal | Physical Review Applied |
| Authors | Igor A. Khramtsov, Dmitry Yu. Fedyanin |
| Institutions | Moscow Institute of Physics and Technology |
| Citations | 15 |
Abstract
Section titled āAbstractāEfficient generation of single photons on demand at a high repetition rate is\na key to the practical realization of quantum-communication networks and\noptical quantum computations. Color centers in diamond are considered to be the\nmost promising platform for building such single-photon sources owing to the\noutstanding emission properties of color centers at room temperature. However,\ntheir efficient electrical excitation remains a challenge due to the inability\nto create a high density of free electrons in diamond. Here, we show that using\nthe self-gating effect in a diamond p-i-n diode, one can overcome the doping\nproblem and inject four orders of magnitude more carriers into the i-region of\nthe diamond diode than the doping of the n-region allows. This high density of\nfree electrons can be efficiently used to boost the single-photon\nelectroluminescence process and enhance the brightness of the single-photon\nsource by more than three orders of magnitude. Moreover, we show that such a\nhigh single-photon emission rate can be achieved at exceptionally low injection\ncurrent densities of only 0.001 A/mm$^2$, which creates the backbone for the\ndevelopment of low-power and cost-efficient diamond quantum optoelectronic\ndevices for quantum information technologies.\n
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - Quantum Information Processing with Diamond: Principles and Applications
- 1995 - Diamond: Electronic Properties and Applications [Crossref]