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6CCVD Research

Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods - NO<sub>2</sub> Hole Doping Effect -

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-09-21
JournalExtended Abstracts of the 2017 International Conference on Solid State Devices and Materials
AuthorsNiloy Chandra Saha, Makoto Kasu

Abstract

Section titled ā€œAbstractā€

2017 International Conference on Solid State Devices and Materials,Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods - NO<sub>2</sub> Hole Doping Effect -

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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