Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-10-30 |
| Journal | Journal of Applied Physics |
| Authors | T. T. Pham, Aurélien Maréchal, Pierre Muret, David Eon, E. Gheeraert |
| Institutions | Institut National Polytechnique de Toulouse, Université Fédérale de Toulouse Midi-Pyrénées |
| Citations | 43 |
Abstract
Section titled âAbstractâMetal oxide semiconductor capacitors were fabricated using p-type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eVâ1cmâ2. The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.