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6CCVD Research

Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3as Gate Insulator

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2019-03-07
JournalIEEE Electron Device Letters
AuthorsC. Verona, M. Benetti, Domenico CannatĆ , Walter Ciccognani, Sergio Colangeli
InstitutionsInstitute for Microelectronics and Microsystems, University of Rome Tor Vergata
Citations18

Abstract

Section titled ā€œAbstractā€

The effectiveness and long-term stability of the surface transfer doping of H-terminated diamond induced by a very thin V 2 O 5 /Al 2 O 3 double layer were deeply investigated. The experimental results demonstrate that the deposition of a 5 nm Al 2 O 3 layer does not alter the transfer doping properties of the V 2 O 5 /H-terminated diamond interface and remarkably improves the stability of the Hall parameters over time. The H-diamond MOSFETs were fabricated by using V 2 O 5 /Al 2 O 3 as gate insulator and characterized in terms of DC characteristics. The devices showed a saturation drain current density of about 220 mA/mm. The repeated measurements of the DC output characteristics of the MOSFETs were performed and monitored over a period of one month. The variations within Ā±0.9 % of the drain current and Ā±0.2 % of the ON-resistance were recorded, demonstrating very high stability of such devices over time.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

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