Carbon nanowalls/diamond heterojunctions as novel photo-switching memory devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-05-01 |
| Authors | Yuuta Imai, K. Ueda, Hideharu Itou, Yuki Mizuno, H. Asano |
| Institutions | Nagoya University |
Abstract
Section titled āAbstractāWe demonstrate in-situ growth of carbon nanowalls (CNWs) on diamond semiconductors by microwave plasma assisted chemical vapor deposition. The resulting CNW/diamond junctions behave as photomemristors having both photo-controllable multiple resistance states and nonvolatile memory functions. The resistance state (high or low resistance state) can be selected by light irradiation with the application of a bias voltage, giving a large resistance switching ratio of ~10 <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>6</sup> . The photo-induced resistance switching behaviors are rarely observed and has only been observed in a few materials and/or heterostructures. These results indicate CNW/diamond (that is, carbon sp <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> -sp <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>3</sup> ) junctions could have applications in novel photo-controllable devices, which have photo-sensing, memory, and switching functions.