Electrical property measurement of two-dimensional hole-gas layer on hydrogen-terminated diamond surface in vacuum-gap-gate structure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-06-24 |
| Journal | Applied Physics Letters |
| Authors | Masafumi Inaba, Hiroshi Kawarada, Yutaka Ohno |
| Institutions | Waseda University, Nagoya University |
| Citations | 8 |
Abstract
Section titled āAbstractāHydrogen-terminated diamond metal-insulator-semiconductor field-effect transistors are candidates for power devices that require a high breakdown field and stable, high-frequency operation. A two-dimensional hole-gas layer can form on H-terminated diamond surfaces. To understand the electrical properties of bare H-terminated diamond surfaces, we investigate the surface impurities on a H-terminated diamond surface in a vacuum-gap gate structure, which uses a H-terminated diamond channel and a vacuum gap as gate dielectrics. To obtain a bare surface without surface adsorbate, the device is annealed in a vacuum. The transconductance is increased by removing adsorbates. The mobility and interface-state density at the H-terminated diamond surface with no adsorbates are 25 cm2 Vā1 sā1 and 1 Ć 1012 cmā2 eVā1, respectively.