Improving the edge quality of single-crystal diamond growth by a substrate holder – An analysis
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-09-01 |
| Journal | Comptes Rendus Physique |
| Authors | Bo Yang, Qiao Shen, Zhiyin Gan, Sheng Liu |
| Institutions | Wuhan University, TrueOne Semiconductor (China) |
| Citations | 7 |
Abstract
Section titled “Abstract”During the growth of a single-crystal diamond by MPCVD, polycrystalline diamonds are prone to grow in the edge regions. This substantially reduces the usable area of the grown diamond film. In addition, the inhomogeneous distribution of internal stress causes diamond to crack during continuous growth. In recent years, a series of experimental studies have been carried out to solve these problems and some achievements have been obtained. However, in order to understand fundamentally the growth mechanism of diamond, the relationship between growth quality and various influencing factors still needs to be quantitatively studied through integrated simulations and experiments. Electron number density and substrate temperature are important factors affecting diamond crystallization quality. In this paper, the growth conditions of the diamond were simulated and analyzed. Simulation results were compared with the experimental results. This evidences that the surface temperature distribution is relatively homogeneous, and that the significant electron number density gradient in the axial direction is the main reason for the formation of polycrystals in the edge regions. Therefore, substrate holders with different cavity depths were designed and the substrates grew in the same temperature range. The surface morphologies, crystalline qualities, and internal stress distributions of the grown diamonds were measured, and it was found that the quality of growth increased first and then decreased with the depth of the cavity, while the growth rate decreased with increasing the latter. These results are in good agreement with the simulation results. Finally, suggestions on the selection of the substrate holder for film growth with different thicknesses are proposed.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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