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6CCVD Research

Diamond microfabrication by imprinting with nickel mold under high temperature

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2021-02-01
JournalDiamond and Related Materials
AuthorsTaira Tabakoya, Masatsugu Nagai, Kazuto Sakauchi, Yuto Nakamura, K. Kobayashi
InstitutionsNational Institute of Advanced Industrial Science and Technology, Kanazawa University
Citations8

Abstract

Section titled ā€œAbstractā€

Diamond is a key material for quantum devices and sensors, microelectromechanical systems, and the next-generation electronic devices. Microfabrication technology of single-crystal diamond (SCD) for device fabrication and processing is required but hardly established. For example, photolithographic techniques using plasma induced etching for the microfabrication of the diamond devices induce damage to its diamond and deteriorate the device-performances. To overcome this problem, we proposed a plasma-free imprint lithographic technique of SCD using nickel (Ni) mold at high temperatures. Prior to contacting with SCD, the native surface oxide film of the Ni mold was reduced by a hydrogen annealing treatment. Then, the samples were contacted with Ni mold closely, and annealed at various temperatures from 800 to 1200 Ā°C for 30 min, aiming at the formation of the microstructure on the SCD surface by imprinting the structure of Ni mold based on the carbon solid solution reaction into Ni. After removing the Ni and the formed graphite by acid treatment from the SCD surface annealed at 1000 Ā°C, imprints with Ni shape structure are revealed on the SCD surface. This microstructure formation processes requires only short periods of time without any specific equipments. Therefore, this diamond imprint lithography is significant and practical for the development of diamond applications.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  3. 2018 - Recent advances in diamond power semiconductor devices [Crossref]
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  6. 2015 - Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition [Crossref]
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