High temperature stability of p+-Si/p-diamond heterojunction diodes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-10-05 |
| Authors | Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang |
| Institutions | Osaka City University, National Institute of Advanced Industrial Science and Technology |
Abstract
Section titled āAbstractāThe high-temperature electrical stability of p<sup>+</sup>-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p<sup>+</sup>-Si/p-diamond HDs are stabler than diamond SBDs against annealing.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2021 - Fabrication of diamond/Si heterojunction diodes by surface activated bonding