Total Ionizing Dose (X-Ray) Effects on the Mismaching of the Analog MOSFETs layouted with Different Layout Sytles
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-08-22 |
| Authors | Vinicius Vono Peruzzi, Gabriel Augusto da Silva, Salvador Pinillos Gimenez |
| Institutions | Centro UniversitƔrio FEI |
Abstract
Section titled āAbstractāThis paper describes an experimental comparative study of the Total Ionizing Dose (TID) effects of X-rays ionizing irradiation on the mismatching between analog Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), n-channel, implemented with different layout styles (Diamond/Hexagonal, Octagonal and Rectangular). During the X-ray ionizing irradiation procedure, MOSFETs were biased in the analog operation condition. The results indicate that the Diamond and Octagonal layout styles for MOSFETs present a better matching between devices (in average 95%) in relation to those obtained with the Conventional counterparts. So, the Diamond and Octagonal layout styles for analog MOSFETs can be considered an alternative hardness-by-design (HBD) strategy to reduce the TID effects in the mismatch between MOSFETs, focusing on the analog CMOS ICs applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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