Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-02-20 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Fei Wang, Genqiang Chen, Guoqing Shao, Wei Wang, Minghui Zhang |
| Institutions | Xi’an Jiaotong University |
| Citations | 2 |
Abstract
Section titled “Abstract”Enhancement mode diamond field-effect transistors with large threshold voltage and low leakage current are highly in demand for low-power electronics. In this article, hydrogen-terminated diamond (H-diamond) transistors with ZrO2/Zr stacked dielectrics deposited by electron beam (EB) evaporation were demonstrated. The threshold voltages boosted from −0.4 to −2.5 V with gate length increasing from 2 to <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$8~\mu \text{m}$ </tex-math></inline-formula> , indicating the normally- OFF operation. The OFF-state leakage current of 10−8 mA/mm and gate-source leakage current density of about <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$10^{-{7}}$ </tex-math></inline-formula> A/cm2 were acquired both for 6- and 8- <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\mu \text{m}$ </tex-math></inline-formula> gate length devices. Additionally, the ON/OFF ratio and subthreshold swing (SS) for the device with a 6- <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\mu \text{m}$ </tex-math></inline-formula> gate length were deduced to be <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$10^{{9}}$ </tex-math></inline-formula> and 128 mV/decade, respectively. The maximum drain current density increases with the gate length shortens and reaches up to −74 mA/mm for the device with a 2- <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\mu \text{m}$ </tex-math></inline-formula> gate length. These performances suggest that the EB method is applicable to fabricate the ZrO2/Zr gate for realizing normally- OFF H-diamond FETs.