Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-01-31 |
| Journal | IEEE Electron Device Letters |
| Authors | Y. Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi, Tetsuya Yamada, Dechen Xu |
| Institutions | Waseda University |
| Citations | 188 |
Abstract
Section titled “Abstract”Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>th</sub> of -2.5—4 V.