Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-04-01 |
| Journal | Technical Physics Letters |
| Authors | N. D. Zhukov, M. I. Shishkin, Š. Š. Š Š¾ŠŗŠ°Ń |
| Institutions | Saratov State University |
| Citations | 4 |
Abstract
Section titled āAbstractāQualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15-25 Ī¼m were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ā¼7 Ī¼m) is characterized by an absorption band at 2.1-2.3 Ī¼m, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50-70 nm) exhibited absorption maxima at 7, 10, and 17 Ī¼m, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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