Investigation of diamond/Ga2O3 and diamond/GaN hetero-p–n junctions using mechanical grafting
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2025-07-21 |
| Journal | Semiconductor Science and Technology |
| Authors | Imteaz Rahaman, Hunter D. Ellis, Botong Li, Mohammad Mohammadi, Yunshan Wang |
| Institutions | University of Utah |
| Citations | 2 |
Abstract
Section titled “Abstract”Abstract Exploring hetero-p-n junctions between ultrawide bandgap (UWBG) semiconductors is critical for advancing our understanding of carrier transport and interface properties, which are key to enabling future high-power electronic applications. However, large lattice mismatches and difficulty in doping have made such investigations particularly difficult. In this study, we introduce a unified approach for forming diamond/ β -Ga 2 O 3 and diamond/GaN hetero-p-n junctions by mechanically grafting their bulk materials, without the use of interfacial layers or complex bonding processes. The mechanically grafted diamond/ β -Ga 2 O 3 junction demonstrates a turn-on voltage of ∼3.25 V and maintains stable electrical behavior up to 125 °C, with low hysteresis (⩽0.2 V at room temperature and ⩽0.7 V at elevated temperature). A remarkably low ideality factor of 1.28 and rectification ratios exceeding 10 6 underscore the quality of the junction. The diamond/GaN heterojunction, formed on both Ga-polar and N-polar surfaces, exhibits stable diode behavior with light emission, indicating efficient charge transport. Both configurations demonstrate near-ideal characteristics, with ideality factors of 1.30 (Ga-polar) and 1.06 (N-polar), and rectification ratios exceeding 10 6 and 10 4 , respectively. The Ga-polar junction also shows notably low hysteresis (<0.05 V at 10 μ A), outperforming its N-polar counterpart. These findings highlight mechanical grafting as a practical and reproducible approach for studying heterojunctions between lattice-mismatched UWBG semiconductors. This method enables direct investigation of interface behavior and junction performance, offering value for both research and education in UWBG semiconductor technologies.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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