Ultrawide‐Bandgap Semiconductors - Research Opportunities and Challenges
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-12-04 |
| Journal | Advanced Electronic Materials |
| Authors | J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis, Debdeep Jena, N. M. Johnson |
| Institutions | Cornell University, MIT Lincoln Laboratory |
| Citations | 1377 |
Abstract
Section titled “Abstract”Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga 2 O 3 , advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2003 - A DARPA Perspective on the Future of Electronics